Recent work of E. Szilágyi includes nuclear analysis using MeV energy ion beams (RBS - Rutherford Backscattering Spectrometry, ERDA - Elastic Recoil Detection Analysis, NRA - Nuclear Reaction Analysis, channeling). She developed a computer code to calculate the depth resolution of the above ion beam techniques.
She has been extensively dealing with ion implantation and with fundamental processes of ion implantation in porous silicon, metals and semiconductors. Her main scientific interests are thin films and multilayers.
She took part in the studies on the oxidation mechanisms of silicon carbide investigated by isotope tracing method.