SELECTED PUBLICATIONS
- Zolnai Z, Ster A, Khánh NQ, Battistig G, Lohner T, Gyulai J, Kótai E, Posselt M:
Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence
J. Appl. Phys. 101 (2007) 023502 - 5. Pető G, Molnár G, Kótai E, Dézsi I, Karsteen M, Södervall U, Willander M, Caymax M, Loo R :
Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
Appl. Phys. Lett. 81 (2002) 37-39 - E. Szilágyi, T. Becze-Deák, L. Bottyán, A. Kocsonya, E. Kótai, D.L. Nagy, A. Kling, G. Battistig, N.Q. Khánh, K. Polgár:
Lattice site determination of Co in low doped congruent LiNbO3 single crystal using PIXE/channeling
Solid State Comm. 115 (2000) 535 - 538. - E. Kótai:
Measurement of the stopping powers for channeled ions in ion implanted crystals
Nucl. Instr. Meth. B 118 (1996) 43-46. - E. Kótai:
Computer Methods for Analysis and Simulation of RBS and ERDA spectra
Nucl. Instr. Meth. B 85 (1994) 588 - 596. - E. Kótai, G. Mezey, T. Lohner, A. Manuaba, F. Pászti, J. Gyulai:
Enhanced sensitivity and depth resolution of oxygen detection combining resonance scattering and tilted target methods Nucl. Instr. Meth.180 (1981) 619 - 623.
FULL PUBLICATION LIST OF ENDRE KÓTAI
1. Zs Baji, A. Szanyo, Gy. Molnár, A.L. Tóth, G. Pető, K. Frey, E. Kótai, G. Kaptay:
Formation of nanoparticles by ion beam irradiation of thin films
J. Nanosci. Nanotechno. 12 (2012) 5009 - 5015.
2. Z. Zolnai, N. Nagy, A. Deák, G. Battistig, E. Kótai:
Three-dimensional view of the shape, size, and atomic composition of ordered nanostructures by Rutherford backscattering spectrometry
Phys. Rev. B 83 (2011) 233302.
3. D.E. Szőcs, E. Szilágyi, Cs. Bogdán, E. Kótai, Z.E. Horváth:
Lithium concentration dependence of implanted helium retention in lithium silicates
Nucl. Instr. Meth. B 268 (2010) 1857 - 1861.
4. Z. Zolnai, A Deák, N. Nagy, A.L. Tóth, E. Kótai, G. Battistig:
A 3D-RBS study of irradiation-induced deformation and masking properties of ordered colloidal nanoparticulate masks
Nucl. Instr. Meth. B 268 (2010) 79 - 86.
5. N.P. Barradas, K. Arstila, G. Battistig, M. Bianconi, N. Dytlewski, C. Jeynes, E. Kótai, G. Lulli, M. Mayer, E. Rauhala, E. Szilágyi, M. Thompson:
Summary of ‘‘IAEA intercomparison of IBA software”
Nucl. Instr. Meth. B 266 (2008) 1338 - 1342.
6. G. Szakács, E. Szilágyi, F. Pászti, E. Kótai:
Determination of migration of ion-implanted helium in silica by proton backscattering spectrometry
Nucl. Instr. Meth. B 266 (2008) 1382 - 1385.
7. Ch. Angelov, S. Georgiev, B Amov, E. Goranova, V. Mikli, I. Dézsi, E. Kótai:
Study of the ion implanted Fe depth distribution in Si after pulsed ion beam treatment
J. Optoelectron. Adv. M. 9 (2007) 307 - 310.
8. N.P. Barradas, K. Arstila, G. Battistig, M. Bianconi, N. Dytlewski, C. Jeynes, E. Kótai, G. Lulli, M. Mayer, E. Rauhala, E. Szilágyi, M. Thompson:
International Atomic Energy Agency intercomparison of ion beam analysis software
Nucl. Instr. Meth. B 262 (2007) 281 - 303.
9. Z. Zolnai, A. Ster, N.Q. Khánh, G. Battistig, T. Lohner, J. Gyulai, E. Kótai, M. Posselt:
Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence
J. Appl. Phys. 101 (2007) 023502.
10. G. Pető, N.Q. Khánh, Z.E. Horváth, G. Molnár, J. Gyulai, E. Kótai, L. Guczi, L. Frey:
Nanoscale morphology and photoemission of arsenic implanted germanium films
J. Appl. Phys. 99 (2006) 084304.
11. R. Bayazitov, R. Batalov, R. Nurutdinov, V. Shustov, P. Gaiduk, I. Dézsi, E. Kótai:
Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beam
Nucl. Instr. Meth. B 240 (2005) 224 - 228.
12. Z. Kajcsos, L. Liszkay, G. Duplatre, L. Varga, L. Lohonyai, F. Pászti, E. Szilágyi, K. Lázár, E. Kótai, G. Pál-Borbély, H.K. Beyer, P. Caullet, J. Patarin, M.E. Azenha, P.M. Gordo, C. Lopes Gil, A.P. de Lima, M.F.F. Marques:
Positronium Trapping in Porous Solids: Means and Limitations for Structural Studies
Acta Physica Polonica A 107 (2005) 729 - 737.
13. Z. Zolnai, A. Ster, N.Q. Khánh, E. Kótai, M. Posselt, G. Battistig, T. Lohner, J. Gyulai:
Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
Mater. Sci. Forum 483-485 (2005) 637 - 640.
14. R.M. Bayazitov, R.I. Batalov, I.B. Khaibullin, G.D. Ivlev, I. Dézsi, E. Kótai:
Structural properties of Fe ion implanted and ruby laser annealed Si layers
J. Phys. D Appl. Phys. 37 (2004) 468 - 471.
15. Z. Zolnai, N.Q. Khanh, T. Lohner, A. Ster, E. Kótai, I. Vickridge, J. Gyulai:
Damage distributions induced by channeling implantation of nitrogen into 6H silicon carbide
Mater. Sci. Forum 433-436 (2003) 645 - 648.
16. G. Pető, G. Molnár, E. Kótai, I. Dézsi, M. Karsteen, U. Södervall, M. Willander, M. Caymax, R. Loo:
Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
Appl. Phys. Lett. 81 (2002) 37 - 39.
17. Z. Zolnai, N.Q. Khanh, E. Szilágyi, E. Kótai, A. Ster, M. Posselt, T. Lohner, J. Gyulai:
Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC
Diamond and Related Materials 11 (2002) 1239 - 1242.
18. A. Declemy, T. Sauvage, E. Kótai, P. Leveque, M.I. Abd El-Ati:
Be- and Mg-ion implantation-induced damage in InSb
Mat. Sci. Semicon. Proc. 4 (2001) 277 - 279.
19. A.R. Ramos, F. Pászti, E Kótai, É. Vázsonyi, O. Conde, M.R. da Silva, M.F. da Silva, J.C. Soares:
Synthesis of cobalt silicide on porous silicon by high dose ion implantation
Nucl. Instr. Meth. B 178 (2001) 283 - 286.
20. E. Szilágyi, N.Q. Khánh, Z.E. Horváth, T. Lohner, G. Battistig, Z. Zolnai, E. Kótai, J. Gyulai:
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
Mater. Sci. Forum 353-356 (2001) 271 - 274.
21. M. Budnar, J. Campbell, S. Fazinic, M. Jaksic, A. Kobzev, E. Kótai, W. Lanford, I. Orlic, F. Pászti, E. Rauhala, A. Turos:
Instrumentation for PIXE and RBS
IAEA-TECDOC-1190, IAEA, Vienna, (2000), pp. 1-71
22. E. Kótai, F. Pászti, E. Szilágyi:
Investigation of beam effect on porous silicon
Nucl. Instr. Meth. B 161-163 (2000) 260 - 263.
23. E. Szilágyi, E. Kótai, Z. Zolnai, G. Battistig, T. Lohner, J. Gyulai:
Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering
2000 International Conference on Ion Implantation Technology (IIT’2000) Proceedings, Alpbach, Austria, 17-22 September 2000, (Eds.: H. Ryssel, L. Frey, J. Gyulai, H. Glawishing), IEEE 00EX432, ISBN 0-7803-6462-7, 2000, pp.131-134.
24. E. Szilágyi, T. Becze-Deák, L. Bottyán, A. Kocsonya, E. Kótai, D.L. Nagy, A. Kling, G. Battistig, N.Q. Khánh, K. Polgár:
Lattice site determination of Co in low doped congruent LiNbO3 single crystal using PIXE/channeling
Solid State Comm. 115 (2000) 535 - 538.
25. E. Kótai:
Effects of crystal defects on the stopping powers for channeled ions in ion implanted single crystals
Nucl. Instr. Meth. B 148 (1999) 172 - 175.
26. E. Kótai:
RBX, Computer methods for analysis and simulation of RBS and ERDA spectra
Proc. of Fourteenth Int. Conf. on the Application of Accelerators in Research and Industry, Nov 6-9, 1996, Denton, Texas USA, CP392, edited by J.L. Duggan and I.L. Morgan, AIP Press, New York 1997, p. 631-634.
27. L. Liszkay, E. Kótai, Zs. Kajcsos, T. Laine:
Direct evidence of fluorine-related defects in F+, BF+ and BF2+ implanted silicon by positron annihilation
Mater. Sci. Forum 255-257 (1997) 683 - 685.
28. T. Lohner, N.Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai:
Ion implantation induced damage accumulation studied by Rutherford backscattering spectrometry and spectroscopy ellipsometry
Mater. Sci. Forum 248-249 (1997) 229 - 232.
29. E. Szilágyi, L. Bottyán, L. Deák, E. Gerdau, V.N. Gittsovich, A. Gróf, E. Kótai, O. Leupold, D.L. Nagy, V.G. Semenov:
Corrosion depth profiles by Rutherford backscattering spectrometry and synchrotron x-ray reflectometry
Mater. Sci. Forum 248-249 (1997) 365 - 368.
30. E. Kótai, N.Q. Khánh, J. Gyulai:
Crystal defects production in silicon by molecular beam implantation
Proc.of the Ninth Int.Conf. on Ion Beam Modification of Materials, Canberra, Australia, 5-10 Febr, 1995. Ion Beam Modification of Materials, eds. J. S. Williams, R. G. Elliman, M. C. Ridgway; Elsevier (1996); p.823-827.
31. E. Kótai:
Measurement of the stopping powers for channeled ions in ion implanted crystals
Nucl. Instr. Meth. B 118 (1996) 43 - 46.
32. L. Varga, L. Liszkay, Zs. Kajcsos, K. Lázár, H.K. Beyer, G. Onyestyák, E. Kótai, L. Lohonyai:
Preliminary Results of the Positron Annihilation in Zeolites: Peak Shape and 3g-Decay
J. Radioanal. Nucl. Chem. Articles 211 (1996) 237 - 245.
33. E. Kótai:
Computer Methods for Analysis and Simulation of RBS and ERDA spectra
Nucl. Instr. Meth. B 85 (1994) 588 - 596.
34. T. Lohner, E. Kótai, N.Q. Khánh, Z. Tóth, M. Fried, K. Vedam, N.V. Nguyen, L.J. Hanekamp, A. van Silfhout:
Ion-implantation induced anomalous surface amorphization in silicon
Nucl. Instr. Meth. B 85 (1994) 335 - 339.
35. G. Molnár, G. Pető, E. Kótai, E. Zsoldos, J. Gyulai, L. Guczi:
Oxidation of Gd Thin Films on Si Substrates via Grain Boundaries
Surface and Interface Analysis 19 (1992) 469 - 472.
36. M.I. Guseva, G.V. Gordejeva, S.M. Ivanov, V.E. Heumoin, G.F. Prokosica, F. Pászti, E. Kótai, A. Manuaba:
Studies of sputtering of amorphous metallic layers
Atomnaja Energia 70 (1991) 156 - 159.
37. M.I. Guseva, G.V. Gordeeva, S.M. Ivanov, V.E. Neumoin, G.F. Prokoshina, F. Pászti, E. Kótai, A. Manuaba:
Sputtering of amorphous metallic alloys
Sov. Atom. Energy 70/3 (1991) 197 - 201.
38. F. Pászti, E. Szilágyi, E. Kótai:
Optimization of the depth resolution in elastic recoil detection
Nucl. Instr. Meth. B 54 (1991) 507 - 512.
39. L. Xiaoqin, L. Chenglu, Y. Genqing, Z. Zuyao, Z. Shichang, E. Kótai:
Grazing angle RBS-channeling analysis of beam current effects in BF2 implanted Si
Nucl. Technol. 14/4 (1991) 217 - 220.
40. Cs. Fetzer, L. Gránásy, T. Kemény, E. Kótai, M. Tegze, I. Vincze, W. Hoving, F. van der Woude:
Laser-melted amorphous and crystallline Fe-B alloys
Phys. Rev. B 42 (1990) 548 - 554.
41. A. Manuaba, F. Pászti, E. Kótai:
Experimental investigation of the channel network formed by high-dose He implantation
J. Nucl. Mater. 175 (1990) 158 - 162.
42. G. Molnár, G. Pető, E. Kótai, L. Guczi:
Oxidation of Gd0.95Si0.05 layers
43. G. Pető, E. Kótai, J. Kanski:
Surface regrowth of implantation damaged Ge
<111>Vacuum 41 (1990) 618 - 620.
44. Gen Qing Yang, N.Q. Khánh, M. Fried, E. Kótai, V. Schiller, Lin Chen Lu, J. Gyulai, Shi Chang Zou:
Damage annealing behavior in diatomic phosphorus ion implanted silicon
Radiat. Eff. Defect S 115 (1990) 183 - 192.
45. A. L. Bortnianskii, M. L. Kolenkov, E. Kótai, M. V. Pavlovits, F. Pászti:
Ustanovka obratnovo Rezerfordskovo rassejaniia dlia analiza sostava, strukturi i svoistv poverhnostnih sloev tviordovo tela
NIIEFA P-D-0809, (1989)
46. N. T. My, F. Pászti, G. Mezey, A. Manuaba, E. Kótai, J. Gyulai:
Effect of temperature on surface modification and the trapping/ re-emission behaviour of Al and an AlMgSi alloy during MeV energy He implantation and post-irradiation annealing
J. Nucl. Mater. 165 (1989) 222 - 232.
47. N. T. My, F. Pászti, A. Manuaba, G. Mezey, E. Kótai, I.A. Gohar:
Blistering and trapping characteristics of aluminium during Ar ion implantation and post- irradiation annealing
J. Nucl. Mater. 168 (1989) 76 - 82.
48. E. Szilágyi, F. Pászti, A. Manuaba, C. Hajdu, E. Kótai:
Cross section measurements of the 1H( 4He, 4He)1H elastic recoil reaction for ERD analysis
Nucl. Instr. Meth. B 43 (1989) 502 - 506.
49. A. Vértes, E. Kuzmann, Gy. Vértes, Z. Szőkefalvi-Nagy, E. Kótai, G. Mezey:
Oxygen separation induced by Xe ion beam upon electrodeposited oxygen-nickel and oxygen- chromium system on iron substrate studies by conversion electron Mössbauer spectroscopy
Hyp. Int. 42 (1988) 1013 - 1016.
50. M. Fried, T. Lohner, E. Jároli, G. Vízkelethy, E. Kótai, J. Gyulai, A. Biró, J. Ádám, M. Somogyi, H. Kerkow:
Optical properties of thermally stabilized ion implantation amorphized silicon
Nucl. Instr. Meth. B 19/20 (1987) 577 - 581.
51. E. Kótai, F. Pászti, A. Manuaba, G. Mezey, J. Gyulai, A. Barna, P. Barna, G. Radnóczi:
Damage structure induced by high-dose helium implantation into single crystal silicon
Nucl. Instr. Meth. B 19-20 (1987) 312 - 316.
52. G. Mezey, F. Pászti, L. Pogány, M. Fried, A. Manuaba, G. Vízkelethy, C. Hajdu, E. Kótai:
Surface deformation due to high fluence helium irradiation
53. V. V. Buchin, M. I. Guseva, S. M. Ivanov, Yu. B. Nikolskii, V. A. Stepantsikov, L. Varga, E. Kótai, G. Mezey, F. Pászti:
Osobennosti raspileniia Fe-Cr-Ni-splavov soderzjaschih primesi tiazjolih elementov
Atomnaja Energia 60 (1986) 210 - 212.
54. V.V. Buchin, M.I. Guseva, S.M. Ivanov, Y.V. Nikolskii, V.A. Stepanchikov, L. Varga, E. Kótai, G. Mezey, F. Pászti:
Distinctive Features of Sputtering of Fe-Cr-Ni Alloys Containing Heavy-Element Alloying Constituents
Sov. Atom. Energy 60 (1986) 254 - 257.
55. E. Jároli, N. Q. Khánh, G. Mezey, E. Zsoldos, B. Kovács, I. Mojzes, T. Lohner, E. Kótai, A. Manuaba, M. Fried, J. Gyulai:
Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by furnace annealing and ion beaming intermixing
Nucl. Instr. Meth. B 15 (1986) 703 - 706.
56. I. B. Khaibullin, G. G. Zakirov, M. M. Zaripov, T. Lohner, L. Pogány, G. Mezey, M. Fried, E. Kótai, F. Pászti, A. Manuaba, J. Gyulai:
Effect of heavy ion implantation and laser annealing on the structural properties of germanium
Phys. Stat. Sol. (a) 94 (1986) 371 - 377.
57. F. Pászti, E. Kótai, G. Mezey, A. Manuaba, L. Pócs, D. Hildebrandt, H. Strusny:
Hydrogen and deuterium measurements by elastic recoil detection using alpha particles
Nucl. Instr. Meth. B 15 (1986) 486 - 491.
58. H. V. Suu, G. Pető, G. Mezey, F. Pászti, E. Kótai, M. Fried, A. Manuaba, E. Zsoldos, J. Gyulai:
Formation of GdSi2 under UHV evaporation and in-situ annealing
Appl. Phys. Lett. 48 (1986) 437 - 438.
59. H. V. Suu, G. Mezey, G. Pető, F. Pászti, E. Kótai, A. Manuaba, M. Fried, J. Gyulai:
Oxidation behaviour of GdSi2 studied by RBS
Nucl. Instr. Meth. B 15 (1986) 247 - 249.
60. V.V. Buchin, M. I. Guseva, S. M. Hjukaleykij, Yu. V. Stepantsikov, L. Varga, E. Kótai, G. Mezey, F. Pászti:
Osobennosti raspilenia Fe-Cr-Ni splavov soderzjashih primesi tjazelih elementov
Proc. of the 3rd All-Union Conf. on Res. and Working out of Construction Mater. for Nuclear Fusion Reactors, (Leningrad, 20-22 Nov. 1984) (1985)
61. H. Grote, D. Hildebrandt, H. Strusny, E. Kótai, A. Manuaba, F. Pászti:
Deuterium and impurity flux measurements in the boundary plasma of T-10
Beitr. Plasma Phys. - Cont. 25 (1985) 449 - 458.
62. D. Hildebrandt, H. Grote, A. Herrmann, M. Laux, P. Pech, H. D. Reiner, H. Strusny, H. Wolff, E. Kótai, A. Manuaba, F. Pászti:
Edge plasma effects during RF-heating in T-10 measured by active and passive probes
Proc. of 12th European Conf. on Controlled Fusion and Plasma Phys., (Budapest 2-6 Sept. 1985), (1985), p. 615-618
63. E. Lendvay, M. Hársy, T. Görög, I. Gyuró, F. Koltai, J. Gyulai, T. Lohner, F. Pászti, G. Mezey, E. Kótai, M. Ránki, L.L. Regel, H.A. Kultchitsky, V. T. Hryapov:
Eksperiment "Eötvös": viraschivanie kristallov GaSb v usloviiah mikrogavitatsii
"Saliut-6-Soiuz" Materialovedenie i tehnologiia (Nauka, Moscow), (1985), p. 79
64. E. Lendvay, M. Hársy, T. Görög, J. Gyuró, I. Pozsgai, F. Koltai, J. Gyulai, T. Lohner, G. Mezey, E. Kótai, F. Pászti, V. T. Hrjapov, N.A. Kultchitsky, L.L. Regel:
The growth of GaSb under microgravity conditions
J. Cryst. Growth 71 (1985) 538 - 550.
65. T. Lohner, L. Varga, G. Mezey, F. Pászti, E. Kótai, J. Gyulai, L. L. Regel, H. A. Kultchitsky, V. T. Hryapov:
Issledonaniie kristallov GaSb i GaAs viraschennih v usloviiah mikrogravitatsii, metodami OP i PIXE
"Saliut-6-Soiuz" Materialovedenie i tehnologiia (Nauka, Moscow,) (1985), p. 90
66. T. Lohner, E. Jároli, M. Fried, G. Mezey, E. Kótai, F. Pászti, A. Manuaba, J. Gyulai:
Ellipsometric characterisation of ion-implanted silicon
Proc. of the 7th Int. Conf. on Ion Implantation in Semiconductors and Other Materials (Vilnius 26-28 Sept. 1983), (1985), p. 203
67. T. Lohner, G. Mezey, M. Fried, L. Ghita, C. Ghita, A. Mertens, H. Kerkow, E. Kótai, F. Pászti, F. Bányai, G. Vízkelethy, E. Jároli, J. Gyulai, M. Somogyi:
Analysis of high dose implanted silicon by high depth resolution RBS and spectroscopic ellipsometry and TEM
Mat. Res. Soc. Symposia Proc. 35 (1985) 523 - 528.
68. G. Mezey, F. Pászti, M. Fried, A. Manuaba, G. Vízkelethy, C. Hajdu, E. Kótai:
Surface erosion due to high fluence helium bombardment
Twenty Years of Plasma Physics, (ed. by McNamara), World Scientific, Philadelphia, (1985), p. 95-103
69. G. Mezey, E. Kótai, P. Révész, A. Manuaba, T. Lohner, J. Gyulai, M. Fried, G. Vízkelethy, F. Pászti, G. Battistig, M. Somogyi:
Enhanced sensitivity of oxigen detection of 3.045 MeV (a,a) elastic scattering and its applications
Acta Phys. Hung. 58 (1985) 39 - 55.
70. N. T. My, G. Mezey, A. Manuaba, F. Pászti, L. Pogány, E. Kótai, M. Fried, L. Pócs:
Effects of heavy ion bombardment induced damage on surface deformation and re-emission characteristics of aluminium under high energetic He irradiation
Proc. of the 12th European Conf. on Controlled Fusion and Plasma Phys., (Budapest 2-6 Sept. 1985), (1985), p. 639-641.
71. N. T. My, A. Manuaba, G. Mezey, F. Pászti, E. Kótai, L. Pócs, E. Klopfer, P. Kostka, M. Fried:
Surface modification and gas re-emission behaviour of Aluminium under quasy-simultaneous multiple energy helium bombardment
Proc. of the 12th European Conf. on Controlled Fusion and Plasma Phys., (Budapest 2-6 Sept. 1985), (1985), p. 642-645.
72. F. Pászti, C. Hajdu, A. Manuaba, N. T. My, E. Kótai, L. Pogány, G. Mezey, M. Fried, G. Vízkelethy, J. Gyulai:
Flaking and wave-like structure on MeV energy high dose 4He+ bombarded silicon
Nucl. Instr. Meth. B 7/8 (1985) 371 - 374.
73. Gy. Vízkelethy, G. Mezey, E. Kótai, A. Manuaba, D. Hildebrandt, W. Frenstrap:
Erosion and deposition investigation on time-resolve implanted probes in T-10 Tokamak
Proc. of 12th European Conf. on Controlled Fusion and Plasma Physics, Budapest, Vol.9F. (1985), p. 603-606
74. D. Hildebrandt, H. Strusny, R. Groetzschel, E. Kótai, F. Pászti:
Damage and trapping behaviour of crystalline silicon at low energy deuterium implantation
Phys. Stat. Sol. (a) 85 (1984) K35 - K38.
75. I. B. Khaibullin, G. G. Zakirov, M. M. Zaripov, T. Lohner, L. Pogány, G. Mezey, E. Kótai, F. Pászti, M. Fried, J. Gyulai:
Influence of heavy ion bombardment and laser annealing on the structural and optical properties of germanium
Proc. of the Energy Pulse Modification of Semiconductors and Related Materials, (Dresden, 25-28 Sept. 1984) ZfK-55, Part I., (1984), p. 188
76. T. Lohner, E. Kótai, F. Pászti, A. Manuaba, M. Fried, J. Gyulai:
Characterisation of ion-implanted silicon by Rutherford backscattering spectrometry and ellipsometry
J. Radioanal. Nucl. Chem. Articles 83 (1984) 75 - 81.
77. H. V. Suu, G. Mezey, G. Pető, E. Kótai, F. Pászti, A. Manuaba, T. Lohner, M. Fried, J. Gyulai:
Formation and characterization of gadolinium silicides
Thin Solid Films 116 (1984) 175 - 175.
78. K. F. Alexander, H. Grote, D. Hildebrandt, M. Laux, P. Pech, H. D. Reiner, H. Strusny, H. Wolff, E. Kótai, A. Manuaba, F. Pászti:
Deuterium and impurity fluxes in the limiter shadow of T-10: indication for time dependent local sources
Proc. of the 11th European Conf. on Controlled Fusion and Plasma Phys. (Aachen, 5-9 sept., 1983), (1983), p. 489-492
79. G. Bürger, Gy. Hrehuss, B. Kardon, P. Kostka, E. Kótai, A. Manuaba, G. Mezey, A. Montvai, F. Pászti, G. Petravich, L. Pócs, I. Szentpétery, M. Tegze, L. Vályi:
Recent measurements on the MT-1 Tokamak
Proc. of the 12th Czech. Seminar on Plasma Phys. and Techn., Liblice, (1983), p. 150
80. H. Grote, D. Hildebrandt, H. Strusny, E. Kótai, A. Manuaba, F. Pászti:
Deuterium and impurity flux measurements in the boundary plasma of T-10
ZIE-83-4 (1983)
81. H. Grote, D. Hildebrandt, M. Laux, P. Pech, H. D. Reiner, H. Strusny, H. Wolff, E. Kótai, A. Manuaba, F. Pászti:
Toroidal deuterium and impurity fluxes measured by desorption probes in the boundary plasma of T-10
Proc. of the 3rd All-Union Conf. on High Temperature Plasma Diagnostics, (Dubna, 12-16 Sept. 1983), (1983)
82. I.B. Khaibullin, G.G. Zakirov, M. M. Zaripov, T. Lohner, F. Pászti, E. Kótai, J. Gyulai:
Ob osobennostiah razuporiodochenia germania pri bombardirovke tiazjolimi ionami
Proc. of the Int. Conf. on Ion Implantation in Semiconductors and Other Materials, (Vilnius, 26-28 Sept. 1983), (1983), p. 83
83. T. Lohner, E. Kótai, F. Pászti, A. Manuaba, M. Fried, J. Gyulai:
Characterisation of ionimplanted silicon by Rutherford Backscattering Spectrometry and Ellipsometry
Proc. of the 3. Tagung Nukleare Analysenverfahren (Dresden, 11-15 Apr. 1983), (1983), p. 20-23
84. T. Lohner, G. Mezey, E. Kótai, F. Pászti, A. Manuaba, J. Gyulai:
Characterisation of ion-implanted silicon by ellipsometry and channeling
Nucl. Instr. Meth. 209/210 (1983) 615 - 620.
85. F. Pászti, E. Kótai, A. Manuaba, G. Vízkelethy, M. Fried, H. V. Suu, T. Lohner:
Light atom accumulation in solids studied by RBS and ERD analysis
Proc. of the 3. Tagung Nukleare Analysenverfahren (Dresden, 11-15 Apr. 1983), (1983), p. 70-73
86. F. Pászti, G. Mezey, L. Pogány, M. Fried, A. Manuaba, E. Kótai, T. Lohner, L. Pócs:
Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment
Nucl. Instr. Meth. 209/210 (1983) 1001 - 1009.
87. F. Pászti, M. Fried, L. Pogány, A. Manuaba, G. Mezey, E. Kótai, I. Lovas, T. Lohner, L. Pócs:
Flaking and wave-like structure on metallic glasses induced by MeV-energy helium ions
Nucl. Instr. Meth. 209/210 (1983) 273 - 280.
88. F. Pászti, M. Fried, L. Pogány, A. Manuaba, G. Mezey, E. Kótai, I. Lovas, T. Lohner, L. Pócs:
Pattern formation in metallic glasses induced by helium ion-implantation: I experiments
Phys. Rev. B 28 (1983) 5688 - 5691.
89. F. Pászti, M. Fried, A. Manuaba, G. Mezey, E. Kótai, T. Lohner:
A simple method to produce quasi-simultaneous multiple energy helium implantation
J. Nucl. Mater. 114 (1983) 330 - 333.
90. F. Pászti, A. Manuaba, L. Pogány, G. Vízkelethy, M. Fried, E. Kótai, H. V. Suu, T. Lohner, L. Pócs, G. Mezey:
Surface deformations and gas escape process studied by quasy-simultaneous multiple energy irradiation
J. Nucl. Mater. 119 (1983) 26 - 36.
91. I. Dézsi, S. Fehér, Gy. Forgács, D. Horváth, E. Kótai, A. Manuaba, G. Mezey, B. Molnár, D.L. Nagy, É. Zsoldos:
Further localization studies of Co atoms diffused into silicon
Nucl. Instr. Meth. 199 (1982) 383 - 386.
92. I. B. Khaibullin, E. I. Shtyrkov, R.M. Bayazitov, R. A. Aganov, T. Lohner, G. Mezey, F. Pászti, A. Manuaba, E. Kótai, J. Gyulai:
Segregation of impurities due to pulsed laser beam annealing
Nucl. Instr. Meth. 199 (1982) 397 - 400.
93. E. Kótai, G. Mezey, F. Pászti, T. Lohner, A. Manuaba, L. Pócs:
Light impurity measurements by 2-4 MeV He beam using recoil detections forward scattering
Proc. of the 2nd All-Union Conf. on Eng. Problems of Fusion Reactors, Leningrad (23-25 June, 1981), (1982), p. 235-241
94. T. Lohner, G. Mezey, E. Kótai, F. Pászti, I. B. Khaibullin, E. I. Shtyrkov, R.M. Bayazitov, R. A. Aganov:
Characterization of ion-implanted and annealed semiconductor layers by ellypsometry and backscattering spectrometry
Proc. of the 3rd Microelectronics Conf. of the Socialist Countries, (Siófok, Hungary, 5-7 May. 1982), (1982), p. 47-48
95. T. Lohner, G. Mezey, E. Kótai, F. Pászti, P. Kostka, E. Klopfer, J. Roósz, A. Manuaba, F. Bányai:
Az ellipszometria és a csatornahatással kombinált Rutherford-visszaszórás alkalmazása vékony rétegek vizsgálatában
Alkalmazott Fémfizikai Iskola, (Győr, Hungary, 27-28 May. 1982), (1982), p. 65-72
96. T. Lohner, G. Mezey, E. Kótai, F. Pászti, A. Manuaba, J. Gyulai:
Characterisation of ion-implanted silicon by ellipsometry and channeling
KFKI Reports 105 (1982) .
97. T. Lohner, G. Mezey, E. Kótai, A. Manuaba, F. Pászti, A. Dévényi, J. Gyulai:
An investigation of ion-bombarded silicon by ellipsometry and channeling effect
Nucl. Instr. Meth. 199 (1982) 405 - 408.
98. A. Manuaba, F. Pászti, L. Pogány, M. Fried, E. Kótai, G. Mezey, T. Lohner, I. Lovas, L. Pócs, J. Gyulai:
Comparative study on Fe32Ni36Cr14P12B6 metallic glass and its polycrystalline modification bombarded by 2000 keV helium ions with high fluence
Nucl. Instr. Meth. 199 (1982) 409 - 419.
99. G. Mezey, F. Pászti, L. Pogány, A. Manuaba, M. Fried, E. Kótai, T. Lohner, L. Pócs, J. Gyulai:
Blistering and exfoliation on gold by 1-3.52 MeV helium particles
Ion Implantation Into Metals, (ed. by V. Ashworth, W. A. Grant, R. P. M. Procter), Pergamon Press, Oxford, (1982), p. 293-301
100. F. Pászti, L. Pogány, G. Mezey, E. Kótai, A. Manuaba, T. Lohner, L. Pócs:
Exfoliation on gold produced by 3.52 MeV He bombardment on room temperature
Proc. of the 2nd All-Union Conf. on Eng. Problems of Fusion Reactors, Leningrad (23-25 June, 1981), (1982), p. 223-230
101. F. Pászti, G. Mezey, E. Kótai, A. Manuaba, T. Lohner, L. Pócs:
A sputtering model of thin over-layers in the MeV energy region
Proc. of the 2nd All-Union Conf. on Eng. Problems of Fusion Reactors, Leningrad (23-25 June, 1981), (1982), p. 231-234
102. F. Pászti, G. Mezey, L. Pogány, M. Fried, A. Manuaba, E. Kótai, T. Lohner, L. Pócs:
Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium bombardment
KFKI Reports 89 (1982) .
103. F. Pászti, M. Fried, L. Pogány, A. Manuaba, G. Mezey, E. Kótai, I. Lovas, T. Lohner, L. Pócs:
Flaking and wave-like structure on metallic glasses induced by MeV-energy helium ions
KFKI Reports 90 (1982) .
104. F. Pászti, M. Fried, A. Manuaba, G. Mezey, E. Kótai, T. Lohner:
A simple method to produce quasy-simultaneous multiple energy helium implantation
KFKI Reports 91 (1982) .
105. R.M. Bayazitov, R. V. Aganov, I. V. Khaibullin, E. I. Shtyrkov, T. Lohner, G. Mezey, E. Kótai, J. Gyulai:
Measurement of segregation of impurities due to laser annealing (in russian)
Proc. of Int. Working Meeting on Ion Implantation in semiconductors and other Materials, ed. M. Stevak (Nov. 30. - Dec. 4. 1981. Prague), (1981), p. 53-55
106. I. Dézsi, S. Fehér, Gy. Forgács, D. Horváth, E. Kótai, A. Manuaba, G. Mezey, B. Molnár, D.L. Nagy, É. Zsoldos:
Further localization studies of Co atoms diffused into silicon
Proc. of Int. Conf. Amorphous Systems Investigated by Nuclear Methods, Balatonfüred, (1981), p. 921-929
107. I. B. Khaibullin, E. I. Shtyrkov, R.M. Bayazitov, R. A. Aganov, T. Lohner, G. Mezey, F. Pászti, A. Manuaba, E. Kótai, J. Gyulai:
Segregation of impurities due to pulsed laser beam annealing
Proc. of Int. Conf. on Amorphous Systems Investigated by Nuclear Methods, (31-Aug-4 Sept. 1981, Balatonfüred, Hungary), (1981), p. 955-967
108. E. Kótai, G. Mezey, T. Lohner, A. Manuaba, F. Pászti, J. Gyulai:
Enhanced sensitivity and depth resolution of oxygen detection combining resonance scattering and tilted target methods
Nucl. Instr. Meth. 180 (1981) 619 - 623.
109. T. Lohner, G. Mezey, E. Kótai, A. Manuaba, F. Pászti, J. Gyulai:
Damage thickness measurment of ion-implanted Si layers by ellipsometry and channeling
Proc. of the Int. Working Meeting on Ion Implantation in Semiconductors and Other Materials, ed. by M. Stevak, Prague (nov. 30 - dec. 4 1981), p. 123-124 (1981)
110. T. Lohner, G. Mezey, E. Kótai, A. Manuaba, F. Pászti, J. Gyulai:
Measurement of the degree of amorphousness by channeling and ellipsometry
Proc. of the Int. Working Meeting on Ion Implantation in Semiconductors and Other Materials, ed. by M. Stevak, Prague (nov. 30 - dec. 4 1981), (1981), p. 125-126
111. T. Lohner, G. Mezey, E. Kótai, A. Manuaba, F. Pászti, A. Dévényi, J. Gyulai:
An investigation of ion-bombarded silicon by ellipsometry and channeling effect
Proc. of Int. Conf. on Amorphous Systems Investigated by Nuclear Methods, (31-Aug-4Sept. 1981, Balatonfüred, Hungary), (1981), p. 979-987
112. T. Lohner, G. Mezey, E. Kótai, F. Pászti, L. Királyhidi, G. Vályi, J. Gyulai:
Ellipsometric and channeling studies on ion-implanted silicon
Nucl. Instr. Meth. 182/183 (1981) 591 - 594.
113. T. Lohner, G. Vályi, G. Mezey, E. Kótai, J. Gyulai:
The role of surface cleaning in the ellipsometric studies of ion-implanted silicon
Radiat. Eff. Defect S 54 (1981) 251 - 252.
114. A. Manuaba, F. Pászti, L. Pogány, M. Fried, E. Kótai, G. Mezey, T. Lohner, I. Lovas, L. Pócs, J. Gyulai:
Comparative study on Fe32Ni36Cr14P12B6 metallic glass and its polycrystalline modification bombarded by 2000 keV helium ions with high fluence
Proc. of Int. Conf. on Amorphous Systems Investigated by Nuclear Methods, (31-Aug-4Sept. 1981, Balatonfüred, Hungary), (1981), p. 989-1005
115. G. Mezey, F. Pászti, L. Pogány, E. Kótai, A. Manuaba, T. Lohner, L. Pócs:
Blistering and exfoliation on Gold produced by 1-3.52 MeV energy 4He+ ions
Proc. of the Int. Working Meeting on Ion Implantation in Semiconductors and Other Materials, ed. by M. Stevak, Prague (nov. 30 - dec. 4 1981), (1981), p. 97-98
116. F. Pászti, G. Mezey, L. Pogány, E. Kótai, A. Manuaba, L. Pócs, T. Lohner, J. Gyulai, G. Bürger, P. Kostka, E. Klopfer:
Investigation of plasma contamination in the MT-1 tokamak and model experiments on high energy exfoliation
Proc. of the 10th European Conf. on Controlled Fusion and Plasma Physics, Moscow (14-19 Sept. 1981) vol. 1., (1981), p. A8a
117. F. Pászti, G. Mezey, E. Kótai, T. Lohner, A. Manuaba, J. Gyulai, L. Pócs:
Surface impurity loss during MeV 14N+ ion bombardment
Nucl. Instr. Meth. 182/183 (1981) 283 - 286.
118. F. Pászti, L. Pogány, G. Mezey, E. Kótai, A. Manuaba, L. Pócs, J. Gyulai, T. Lohner:
Blistering and exfoliation in gold by 3.52 MeV helium ions
KFKI Reports 22 (1981) .
119. F. Pászti, J. Tar, E. Kótai, A. Manuaba, T. Lohner, G. Mezey, L. Pócs:
Preliminary results of the investigation of plasma contamination in MT-1 tokamak on probes by RBS and channeling
KFKI Reports 27 (1981) .
120. F. Pászti, L. Pogány, G. Mezey, E. Kótai, A. Manuaba, L. Pócs, J. Gyulai, T. Lohner:
Investigations on blistering and exfoliation in gold by 3.52 MeV helium ions
J. Nucl. Mater. 98 (1981) 11 - 17.
121. L. Pogány, F. Pászti, G. Mezey, E. Kótai, A. Manuaba, L. Pócs, J. Gyulai, T. Lohner:
SEM investigation on gold surfaces bombarded by 3.52 MeV helium ions
Proc. of the X. Tagung "Elektronenmikroskopie", (Leipzig 19-21 Jan. 1981), (1981), p. 470-471
122. V. P. Kolonits, E. Kótai, Gy. Hárs, J. Gyulai:
The investigation of the oxidation of tantalum nitrate layers by RBS and AES methods and by the measuring of the resistance, respectively
Proc. of 8th Int. Vacuum Congress (sept. 22-26. 1980. Cannes) Vol. I., (1980), p. 677
123. E. Kótai, G. Mezey, T. Lohner, A. Manuaba, F. Pászti, J. Gyulai:
Enhanced sensitivity and depth resolution of oxygen detection combining resonance scattering and tilted target methods
KFKI Reports 66 (1980) .
124. E. Kótai, T. Lohner, A. Manuaba, G. Mezey, R. Coussement, I. Dézsi, G. Langouche:
Lattice location of Co implanted in silicon
Radiat. Eff. Defect S 47 (1980) 153 - 155.
125. E. Kótai, T. Nagy, O. Meyer, J. Gyulai, P. Révész, G. Mezey, T. Lohner, A. Manuaba:
Diffusion measurement of implanted Sb into Si, using SiO2 encapsulation
Radiat. Eff. Defect S 47 (1980) 27 - 29.
126. T. Lohner, G. Mezey, E. Kótai, F. Pászti, L. Királyhidi, G. Vályi, J. Gyulai:
Ellipsometric and channeling studies on ion-implanted silicon
KFKI Reports 64 (1980) .
127. F. Pászti, G. Mezey, E. Kótai, T. Lohner, A. Manuaba, J. Gyulai, L. Pócs:
Surface impurity loss during MeV 14N+ ion bombardment
KFKI Reports 65 (1980) .
128. G. Pető, E. Kótai:
Distribution of Cu in Al-Cu sandwich layer after annealing
Proc. of 8th Int. Vacuum Congress (Sept. 22-26. 1980. Cannes) Vol. I., (1980), p. 177-180
129. E. Kótai:
Foszfor-szilikát üveg foszfortartalmának meghatározása
HIKI Reports, XIX. 2., 54 (1979)
130. E. Kótai, T. Lohner, A. Manuaba, G. Mezey, R. Coussement, I. Dézsi, G. Langouche:
Lattice location of Co implanted in silicon
Proc. of 1th Conf. on Ion Beam Modification of Materials, (1978, szept 4-9, Budapest, Hungary), (1978), p. 567-572
131. E. Kótai, T. Nagy, O. Meyer, J. Gyulai, P. Révész, G. Mezey, T. Lohner, A. Manuaba:
Diffusion measurement of implanted Sb into Si, using SiO2 encapsulation
Proc. of 1th Conf. on Ion Beam Modification of Materials, (1978, szept 4-9 Budapest, Hungary), (1978), p. 573-581
132. G. Mezey, E. Kótai, T. Nagy, T. Lohner, A. Manuaba, J. Gyulai, V.R. Deline, C.A. Evans Jr, R.J. Blattner:
A comparison of techniques for depth profiling oxygen in silicon
Nucl. Instr. Meth. 167 (1979) 279 - 287.
133. G. Mezey, E. Kótai, J. Gyulai, T. Lohner, T. Nagy, A. Manuaba:
A methodical innovation to improve the depth resolution of channeling measurements
Proc. of Int. Conf. on Ion Implantation in Semiconductors (Reinhardsbrunn, 1977) Part II, ZfK- 360, (1978), p. 433-442
134. G. Mezey, E. Kótai, T. Lohner, T. Nagy, J. Gyulai, A. Manuaba:
Improved depth resolution of channeling measurement in Rutherford backscattering by a detector tilt
Nucl. Instr. Meth. 149 (1978) 235 - 237.
135. T. Lohner, G. Mezey, E. Kótai, T. Nagy, A. Manuaba, J. Gyulai:
Felületi rétegek oxigéntartalmának meghatározása rezonancia visszaszórással
Izotóptechnika 20 (1977) 368 - 372.
136. G. Mezey, T. Nagy, J. Gyulai, E. Kótai, A. Manuaba, T. Lohner, J.W. Mayer:
Enhanced and inhibited oxidation of implanted silicon
5th Int. Conf. on Semicond. (Boulde, Colorado, USA, 1976) Ion Implantation in Semiconductors (ed. by F. Chernow, J. A. Borders, D. K. Brice )Plenum Press, New York, (1977), p. 49-56
137. G. Mezey, T. Nagy, T. Lohner, E. Kótai, A. Manuaba, J. Gyulai:
Felületi rétegek vizsgálata nagyszögű Rutherford szórással
Izotóptechnika 20 (1977) 358 - 362.
138. G. Mezey, T. Nagy, J. Gyulai, E. Kótai, T. Lohner, M. Somogyi:
Substoichiometric native oxide layers on GaP studied by 4He+ backscattering
Thin Solid Films 43 (1977) L23 - L26.
139. J. W. Mayer, L. Csepregi, J. Gyulai, T. Nagy, G. Mezey, P. Révész, E. Kótai:
MeV He backscattering analysis of ion implanted Si, drive-in diffusion and epitaxial regrowth
Thin Solid Films 32 (1976) 303 - 306.
140. G. Mezey, T. Nagy, J. Gyulai, E. Kótai, T. Lohner, A. Manuaba:
Surface passivation of silicon by implantation
Proc. of Int. Conf on Phys.of Ionized Gases, Ljubljana, (1976), p. 224-227
141. G. Mezey, J. Gyulai, T. Nagy, E. Kótai, A. Manuaba:
Enhanced sensitivity of oxygen detection by the 3.05 MeV (a,a) elastic scattering
Ion Beam Surface Layer Analysis, Vol.1. (1976), p. 303-312
142. T. Nagy, G. Mezey, E. Kótai, J. Gyulai, P. Révész:
Lattice location and electrical behavior of group III. and V. elements implanted into silicon
KFKI Reports 24 (1976) .
143. T. Tarnóczi, I. Nagy, G. Mezey, T. Nagy, E. Kótai, G. Pető:
He backscattering investigation on sputtered Gd-Co amorphous films
2nd Int. Coll. on Sputtering and its Applications, Nice, CIP-76, (1976) p. 144
144. T. Tarnóczi, I. Nagy, G. Mezey, T. Nagy, E. Kótai, G. Pető:
He backscattering investigation on sputtered Gd-Co amorphous films
KFKI Reports 49 (1976) .
145. P. Glaser, Á. Hermann, G. Vágó, E. Kótai, G. Mezey:
Backscattering studies of ion-evaporated layers on silicon
Proc. of Int. Conf. on Ion Implantation in Semiconductors, Budapest, (1975), p. 621-631
146. T. Nagy, G. Mezey, E. Kótai, J. Gyulai:
Issledovanie naruseni resetki i polozhenie vnedrennih atomov As, Sb, i Ga v kristallicheskoy resetke kremnia v zavisimosti ot temperaturi otzhiga i plotnosthi toka vnedrennih ionov (in russian)
Proc. of Int. Conf. on Ion Implantation in Semiconductors, Lublin, (1974), p.73-79
Others
147. E. Kótai, E. Szilágyi:
Magyar innovációk a Rutherford-visszaszórási technikában
Fizikai Szemle 61 (2011) 301 - 310.
148. E. Kótai:
MeV-es energiájú ionok szórásán alapuló felületanalitikai módszerek továbbfejlesztése
Candidate of Physics Thesis, Budapest, 1992.
149. E. Kótai:
Gyorsító berendezések alkalmazása félvezető rétegek előállításában és minősítésében
Egyetemi doktori értekezés, Budapest, 1977.